FET Type
P-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
60 V
Current - Continuous Drain (Id) @ 25℃
4A (Ta)
3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
-
Rds On (Max) @ Id, Vgs
100mOhm @ 2A, 10V
117mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 20 V
310 pF @ 20 V
Power Dissipation (Max)
1.6W (Ta)
-
Operating Temperature
150 ℃ (TJ)
-
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
6-CPH
6-CPH
Package / Case
SOT-23-6
SOT-23-6
