FET Type
P-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
60 V
Current - Continuous Drain (Id) @ 25℃
5A (Ta)
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
-
Rds On (Max) @ Id, Vgs
42mOhm @ 3A, 4.5V
220mOhm @ 1A, 4V
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
4.2 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds
1230 pF @ 10 V
325 pF @ 20 V
Power Dissipation (Max)
1.6W (Ta)
1W (Ta)
Operating Temperature
150 ℃ (TJ)
150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
6-CPH
3-CPH
Package / Case
SOT-23-6 Thin, TSOT-23-6
SC-96
