Technology
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MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
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30 V
Current - Continuous Drain (Id) @ 25℃
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6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
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-
Rds On (Max) @ Id, Vgs
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24mOhm @ 3A, 4V
Gate Charge (Qg) (Max) @ Vgs
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16.1 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds
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1295 pF @ 10 V
Power Dissipation (Max)
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1.2W (Ta)
Operating Temperature
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150 ℃ (TJ)
Mounting Type
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Surface Mount
Supplier Device Package
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3-CPH
