Technology
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
100 V
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Current - Continuous Drain (Id) @ 25℃
1A (Ta)
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Drive Voltage (Max Rds On, Min Rds On)
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Rds On (Max) @ Id, Vgs
630mOhm @ 500mA, 10V
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Gate Charge (Qg) (Max) @ Vgs
6.5 nC @ 10 V
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Input Capacitance (Ciss) (Max) @ Vds
240 pF @ 20 V
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Power Dissipation (Max)
1W (Ta)
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Operating Temperature
150 ℃ (TJ)
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Mounting Type
Surface Mount
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Supplier Device Package
3-CPH
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