FET Type
P-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
20 V
Current - Continuous Drain (Id) @ 25℃
3A (Ta)
6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
-
Rds On (Max) @ Id, Vgs
83mOhm @ 1.5A, 4.5V
20mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs
4.6 nC @ 4.5 V
13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
375 pF @ 10 V
1200 pF @ 10 V
Power Dissipation (Max)
-
1.6W (Ta)
Operating Temperature
-
150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
3-CPH
6-CPH
Package / Case
TO-236-3, SC-59, SOT-23-3
SOT-23-6 Thin, TSOT-23-6
