FET Type
P-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
60 V
Current - Continuous Drain (Id) @ 25℃
3A (Ta)
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
-
Rds On (Max) @ Id, Vgs
83mOhm @ 1.5A, 4.5V
220mOhm @ 1A, 4V
Gate Charge (Qg) (Max) @ Vgs
4.6 nC @ 4.5 V
4.2 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds
375 pF @ 10 V
325 pF @ 20 V
Power Dissipation (Max)
-
1W (Ta)
Operating Temperature
-
150 ℃ (TJ)
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
3-CPH
3-CPH
Package / Case
TO-236-3, SC-59, SOT-23-3
SC-96
