FET Type
P-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
60 V
Current - Continuous Drain (Id) @ 25℃
5A (Ta)
3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
-
Rds On (Max) @ Id, Vgs
45mOhm @ 2.5A, 10V
117mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs
21.8 nC @ 10 V
6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1115 pF @ 10 V
310 pF @ 20 V
Power Dissipation (Max)
1.2W (Ta)
-
Operating Temperature
150 ℃ (TJ)
-
Mounting Type
Surface Mount
Surface Mount
Supplier Device Package
3-CPH
6-CPH
Package / Case
SC-96
SOT-23-6
