FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
200 V
Current - Continuous Drain (Id) @ 25℃
9.2A (Tc)
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
-
Rds On (Max) @ Id, Vgs
610mOhm @ 7A, 10V
430mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
-
4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
46 nC @ 10 V
12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 30 V
390 pF @ 10 V
Power Dissipation (Max)
2W (Ta), 40W (Tc)
-
Operating Temperature
150 ℃ (TJ)
-
Mounting Type
Through Hole
Surface Mount
Supplier Device Package
TO-220F-3FS
TO-252 (MP-3Z)
Package / Case
TO-220-3 Full Pack
TO-252-3, DPak (2 Leads + Tab), SC-63