FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
500 V
Current - Continuous Drain (Id) @ 25℃
9.6A (Tc)
7.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
-
Rds On (Max) @ Id, Vgs
520mOhm @ 7A, 10V
850mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs
38.4 nC @ 10 V
24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 30 V
600 pF @ 30 V
Power Dissipation (Max)
2W (Ta), 37W (Tc)
2W (Ta), 33W (Tc)
Operating Temperature
150 ℃ (TJ)
150 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-220FI(LS)
TO-220FI(LS)
Package / Case
TO-220-3 Full Pack
TO-220-3 Full Pack
