FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
500 V
Current - Continuous Drain (Id) @ 25℃
9.6A (Tc)
5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
10V
Rds On (Max) @ Id, Vgs
520mOhm @ 7A, 10V
1.5Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
-
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
38.4 nC @ 10 V
-
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 30 V
650 pF @ 10 V
Power Dissipation (Max)
2W (Ta), 37W (Tc)
30W (Tc)
Operating Temperature
150 ℃ (TJ)
150 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-220FI(LS)
TO-220F
Package / Case
TO-220-3 Full Pack
TO-220-3 Full Pack
