FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1500 V
100 V
Current - Continuous Drain (Id) @ 25℃
4A (Ta)
26A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
4V, 10V
Rds On (Max) @ Id, Vgs
7Ohm @ 2A, 10V
60mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
-
2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
790 pF @ 30 V
2150 pF @ 20 V
Power Dissipation (Max)
3W (Ta), 65W (Tc)
1.75W (Ta), 45W (Tc)
Operating Temperature
150 ℃ (TJ)
150 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-3PML
TO-220
Package / Case
TO-3P-3 Full Pack
TO-220-3
