FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
75 V
Current - Continuous Drain (Id) @ 25℃
18A (Ta)
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
-
Rds On (Max) @ Id, Vgs
55mOhm @ 9A, 10V
6mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V
220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
775 pF @ 20 V
12200 pF @ 20 V
Power Dissipation (Max)
2W (Ta), 20W (Tc)
1.65W (Ta), 90W (Tc)
Operating Temperature
150 ℃ (TJ)
150 ℃ (TJ)
Mounting Type
Through Hole
Surface Mount
Supplier Device Package
TO-220ML
TO-263-2
Package / Case
TO-220-3 Full Pack
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
