Technology
-
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
-
60 V
Current - Continuous Drain (Id) @ 25℃
-
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
-
Rds On (Max) @ Id, Vgs
-
8.7mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs
-
95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
-
5450 pF @ 10 V
Power Dissipation (Max)
-
1W (Ta), 84W (Tc)
Operating Temperature
-
150 ℃ (TJ)
Mounting Type
-
Through Hole
Supplier Device Package
-
TO-251
Package / Case
-
TO-251-3 Short Leads, IPak, TO-251AA
