Technology
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MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
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500 V
Current - Continuous Drain (Id) @ 25℃
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20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
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Rds On (Max) @ Id, Vgs
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290mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
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3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
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55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
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3300 pF @ 10 V
Power Dissipation (Max)
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150W (Ta)
Operating Temperature
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150 ℃
Mounting Type
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Through Hole
Supplier Device Package
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TO-3P
Package / Case
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TO-3P-3, SC-65-3
