FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
60 V
Current - Continuous Drain (Id) @ 25℃
20A (Ta)
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
4V, 10V
Rds On (Max) @ Id, Vgs
290mOhm @ 10A, 10V
5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1mA
-
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3300 pF @ 10 V
12500 pF @ 20 V
Power Dissipation (Max)
150W (Ta)
1.75W (Ta), 90W (Tc)
Operating Temperature
150 ℃
150 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-3P
TO-220-3
Package / Case
TO-3P-3, SC-65-3
TO-220-3
