FET Type
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
650 V
Current - Continuous Drain (Id) @ 25℃
20A (Ta)
8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
10V
Rds On (Max) @ Id, Vgs
290mOhm @ 10A, 10V
720mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1mA
-
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
45.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3300 pF @ 10 V
1200 pF @ 30 V
Power Dissipation (Max)
150W (Ta)
2W (Ta), 40W (Tc)
Operating Temperature
150 ℃
150 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-3P
TO-220FI(LS)
Package / Case
TO-3P-3, SC-65-3
TO-220-3 Full Pack
