Technology
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
500 V
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Current - Continuous Drain (Id) @ 25℃
20A (Ta)
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Drive Voltage (Max Rds On, Min Rds On)
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Rds On (Max) @ Id, Vgs
290mOhm @ 10A, 10V
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Vgs(th) (Max) @ Id
3.5V @ 1mA
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Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
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Input Capacitance (Ciss) (Max) @ Vds
3300 pF @ 10 V
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Power Dissipation (Max)
150W (Ta)
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Operating Temperature
150 ℃
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Mounting Type
Through Hole
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Supplier Device Package
TO-3P
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Package / Case
TO-3P-3, SC-65-3
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