FET Type
P-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
60 V
Current - Continuous Drain (Id) @ 25℃
27A (Ta)
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
4V, 10V
Rds On (Max) @ Id, Vgs
77mOhm @ 14A, 10V
60mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
-
2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
74 nC @ 10 V
45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4200 pF @ 20 V
2200 pF @ 20 V
Power Dissipation (Max)
65W (Tc)
1W (Ta), 30W (Tc)
Operating Temperature
150 ℃ (TA)
150 ℃
Mounting Type
Surface Mount
Through Hole
Supplier Device Package
TO-263-2
TP
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-251-3 Short Leads, IPak, TO-251AA
