Technology
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss)
100 V
-
Current - Continuous Drain (Id) @ 25℃
27A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
-
Rds On (Max) @ Id, Vgs
77mOhm @ 14A, 10V
-
Gate Charge (Qg) (Max) @ Vgs
74 nC @ 10 V
-
Input Capacitance (Ciss) (Max) @ Vds
4200 pF @ 20 V
-
Power Dissipation (Max)
65W (Tc)
-
Operating Temperature
150 ℃ (TA)
-
Mounting Type
Surface Mount
-
Supplier Device Package
TO-263-2
-
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
-
