FET Type
P-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
100 V
Current - Continuous Drain (Id) @ 25℃
28A (Ta)
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
-
Rds On (Max) @ Id, Vgs
38mOhm @ 14A, 10V
136mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4360 pF @ 20 V
2090 pF @ 20 V
Power Dissipation (Max)
2W (Ta), 30W (Tc)
2W (Ta), 25W (Tc)
Operating Temperature
150 ℃ (TJ)
150 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TO-220ML
TO-220ML
Package / Case
TO-220-3 Full Pack
TO-220-3 Full Pack
