2SJ646-TL-E
2SJ646-TL-E
Active
Description:  P-CHANNEL SILICON MOSFET
Manufacturer:  onsemi
Datasheet:   2SJ646-TL-E Datasheet
History Price: $0.20000
In Stock: 48000
2SJ646-TL-E vs 2SJ661-DL-1E
Manufacturer
Series
-
-
Packaging
Bulk
Tape & Reel (TR)
Status
Active
Obsolete
FET Type
-
P-Channel
Technology
-
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
-
60 V
Current - Continuous Drain (Id) @ 25℃
-
38A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
4V, 10V
Rds On (Max) @ Id, Vgs
-
39mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
-
-
Gate Charge (Qg) (Max) @ Vgs
-
80 nC @ 10 V
Vgs (Max)
-
?0V
Input Capacitance (Ciss) (Max) @ Vds
-
4360 pF @ 20 V
FET Feature
-
-
Power Dissipation (Max)
-
1.65W (Ta), 65W (Tc)
Operating Temperature
-
150 ℃ (TJ)
Mounting Type
-
Surface Mount
Supplier Device Package
-
TO-263-2
Package / Case
-
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB