2SJ645-E
2SJ645-E
Active
Description:  P-CHANNEL SMALL SIGNAL MOSFET
Manufacturer:  onsemi
Datasheet:   2SJ645-E Datasheet
History Price: $1.26000
In Stock: 31000
2SJ645-E vs 2SJ649-AZ
Mfr Part
Series
-
-
Packaging
Bulk
Bulk
Status
Active
Last Time Buy
FET Type
-
P-Channel
Technology
-
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
-
60 V
Current - Continuous Drain (Id) @ 25℃
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20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
4V, 10V
Rds On (Max) @ Id, Vgs
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48mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
-
-
Gate Charge (Qg) (Max) @ Vgs
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38 nC @ 10 V
Vgs (Max)
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?0V
Input Capacitance (Ciss) (Max) @ Vds
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1900 pF @ 10 V
FET Feature
-
-
Power Dissipation (Max)
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2W (Ta), 25W (Tc)
Operating Temperature
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150 ℃ (TJ)
Mounting Type
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Through Hole
Supplier Device Package
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TO-220 Isolated Tab
Package / Case
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TO-220-3 Isolated Tab