2SJ645-E
2SJ645-E
Active
Description:  P-CHANNEL SMALL SIGNAL MOSFET
Manufacturer:  onsemi
Datasheet:   2SJ645-E Datasheet
History Price: $1.26000
In Stock: 37650
2SJ645-E vs 2SJ542-E
Mfr Part
Series
-
-
Packaging
Bulk
Bulk
Status
Active
Active
FET Type
-
N-Channel
Technology
-
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
-
60 V
Current - Continuous Drain (Id) @ 25℃
-
18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
-
Rds On (Max) @ Id, Vgs
-
65mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
-
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
-
Vgs (Max)
-
?0V
Input Capacitance (Ciss) (Max) @ Vds
-
1300 pF @ 10 V
FET Feature
-
-
Power Dissipation (Max)
-
60W (Tc)
Operating Temperature
-
150 ℃
Mounting Type
-
Through Hole
Supplier Device Package
-
TO-220AB
Package / Case
-
TO-220-3