FET Type
P-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
60 V
Current - Continuous Drain (Id) @ 25℃
12A (Ta)
28A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
4V, 10V
Rds On (Max) @ Id, Vgs
60mOhm @ 6A, 10V
38mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
2.6V @ 1mA
-
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2200 pF @ 20 V
4360 pF @ 20 V
Power Dissipation (Max)
1W (Ta), 30W (Tc)
2W (Ta), 30W (Tc)
Operating Temperature
150 ℃
150 ℃ (TJ)
Mounting Type
Through Hole
Through Hole
Supplier Device Package
TP
TO-220F-3SG
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
TO-220-3 Full Pack
