2SJ555-90-E
2SJ555-90-E
Active
Description:  P-CHANNEL POWER MOSFET
Manufacturer:  Renesas Electronics
Datasheet:   2SJ555-90-E Datasheet
History Price: $4.76000
In Stock: 36000
2SJ555-90-E vs 2SJ559-T1-A
Series
-
-
Packaging
Bulk
Bulk
Status
Active
Active
FET Type
-
P-Channel
Technology
-
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
-
30 V
Current - Continuous Drain (Id) @ 25℃
-
100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
-
Rds On (Max) @ Id, Vgs
-
13Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id
-
1.7V @ 10μA
Gate Charge (Qg) (Max) @ Vgs
-
-
Vgs (Max)
-
-
Input Capacitance (Ciss) (Max) @ Vds
-
5000 pF @ 3 V
FET Feature
-
-
Power Dissipation (Max)
-
-
Operating Temperature
-
-
Mounting Type
-
Surface Mount
Supplier Device Package
-
SC-75-3, USM
Package / Case
-
SC-75, SOT-416