2SJ555-90-E
2SJ555-90-E
Active
Description:  P-CHANNEL POWER MOSFET
Manufacturer:  Renesas Electronics
Datasheet:   2SJ555-90-E Datasheet
History Price: $4.76000
In Stock: 36000
2SJ555-90-E vs 2SJ358-T1-AZ
Series
-
-
Packaging
Bulk
Bulk
Status
Active
Obsolete
FET Type
-
P-Channel
Technology
-
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
-
60 V
Current - Continuous Drain (Id) @ 25℃
-
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
4V, 10V
Rds On (Max) @ Id, Vgs
-
300mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id
-
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
23.9 nC @ 10 V
Vgs (Max)
-
+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds
-
600 pF @ 10 V
FET Feature
-
-
Power Dissipation (Max)
-
2W (Ta)
Operating Temperature
-
150 ℃
Mounting Type
-
Surface Mount
Supplier Device Package
-
MP-2
Package / Case
-
TO-243AA