Technology
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss)
60 V
-
Current - Continuous Drain (Id) @ 25℃
20A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
-
Rds On (Max) @ Id, Vgs
50mOhm @ 10A, 10V
-
Vgs(th) (Max) @ Id
2V @ 1mA
-
Gate Charge (Qg) (Max) @ Vgs
74 nC @ 10 V
-
Input Capacitance (Ciss) (Max) @ Vds
2360 pF @ 10 V
-
Power Dissipation (Max)
2W (Ta), 35W (Tc)
-
Operating Temperature
150 ℃
-
Mounting Type
Through Hole
-
Supplier Device Package
MP-45F
-
Package / Case
TO-220-3 Isolated Tab
-
