2SJ361RYTR-E
2SJ361RYTR-E
Active
Description:  POWER FIELD-EFFECT TRANSISTOR, 2
Manufacturer:  Renesas Electronics
History Price: $0.58000
In Stock: 24000
2SJ361RYTR-E vs 2SJ652-RA11
Series
-
-
Packaging
Bulk
Tube
Status
Active
Obsolete
FET Type
-
P-Channel
Technology
-
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
-
60 V
Current - Continuous Drain (Id) @ 25℃
-
28A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
4V, 10V
Rds On (Max) @ Id, Vgs
-
38mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
-
-
Gate Charge (Qg) (Max) @ Vgs
-
80 nC @ 10 V
Vgs (Max)
-
?0V
Input Capacitance (Ciss) (Max) @ Vds
-
4360 pF @ 20 V
FET Feature
-
-
Power Dissipation (Max)
-
-
Operating Temperature
-
150 ℃ (TJ)
Mounting Type
-
Through Hole
Supplier Device Package
-
TO-220ML
Package / Case
-
TO-220-3 Full Pack