Technology
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MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
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60 V
Current - Continuous Drain (Id) @ 25℃
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12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
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4V, 10V
Rds On (Max) @ Id, Vgs
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60mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
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2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
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45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
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2200 pF @ 20 V
Power Dissipation (Max)
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1W (Ta), 30W (Tc)
Operating Temperature
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150 ℃
Mounting Type
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Through Hole
Supplier Device Package
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TP
Package / Case
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TO-251-3 Short Leads, IPak, TO-251AA
