2SJ361RYTR-E
2SJ361RYTR-E
Active
Description:  POWER FIELD-EFFECT TRANSISTOR, 2
Manufacturer:  Renesas Electronics
History Price: $0.58000
In Stock: 24000
2SJ361RYTR-E vs 2SJ197-T1-AZ
Series
-
-
Packaging
Bulk
Bulk
Status
Active
Obsolete
FET Type
-
P-Channel
Technology
-
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
-
60 V
Current - Continuous Drain (Id) @ 25℃
-
1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
4V, 10V
Rds On (Max) @ Id, Vgs
-
1Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
-
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
-
Vgs (Max)
-
?0V
Input Capacitance (Ciss) (Max) @ Vds
-
220 pF @ 10 V
FET Feature
-
-
Power Dissipation (Max)
-
2W (Ta)
Operating Temperature
-
150 ℃
Mounting Type
-
Surface Mount
Supplier Device Package
-
SOT-89
Package / Case
-
TO-243AA