FET Type
P-Channel
P-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
60 V
Current - Continuous Drain (Id) @ 25℃
2A (Ta)
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
-
Rds On (Max) @ Id, Vgs
350mOhm @ 1A, 10V
135mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
-
Gate Charge (Qg) (Max) @ Vgs
12.2 nC @ 10 V
21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
300 pF @ 10 V
1020 pF @ 20 V
Power Dissipation (Max)
-
2W (Ta), 20W (Tc)
Operating Temperature
-
150 ℃ (TJ)
Mounting Type
Surface Mount
Through Hole
Supplier Device Package
SC-62
TO-220ML
Package / Case
TO-243AA
TO-220-3 Full Pack
