Technology
-
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
-
100 V
Current - Continuous Drain (Id) @ 25℃
-
27A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
4V, 10V
Rds On (Max) @ Id, Vgs
-
77mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs
-
74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
-
4200 pF @ 20 V
Power Dissipation (Max)
-
65W (Tc)
Operating Temperature
-
150 ℃ (TA)
Mounting Type
-
Surface Mount
Supplier Device Package
-
TO-263-2
Package / Case
-
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
