2SC3650-TD-E
2SC3650-TD-E
Active
Description:  NPN EPITAXIAL PLANAR SILICON
Manufacturer:  SANYO Semiconductor
History Price: $0.23000
In Stock: 13000
2SC3650-TD-E vs 2SCR563F3TR
Series
-
-
Packaging
Bulk
Tape & Reel (TR)
Status
Active
Active
Transistor Type
-
NPN
Current - Collector (Ic) (Max)
-
6 A
Voltage - Collector Emitter Breakdown (Max)
-
50 V
Vce Saturation (Max) @ Ib, Ic
-
350mV @ 150mA, 3A
Current - Collector Cutoff (Max)
-
1μA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
-
180 @ 500mA, 3V
Power - Max
-
1 W
Frequency - Transition
-
200MHz
Operating Temperature
-
150 ℃ (TJ)
Mounting Type
-
Surface Mount
Package / Case
-
3-UDFN Exposed Pad
Supplier Device Package
-
HUML2020L3