2SC3650-TD-E
2SC3650-TD-E
Active
Description:  NPN EPITAXIAL PLANAR SILICON
Manufacturer:  SANYO Semiconductor
History Price: $0.23000
In Stock: 13000
2SC3650-TD-E vs 2SC6099-TL-E
Series
-
-
Packaging
Bulk
Tape & Reel (TR)
Status
Active
Not For New Designs
Transistor Type
-
NPN
Current - Collector (Ic) (Max)
-
2 A
Voltage - Collector Emitter Breakdown (Max)
-
100 V
Vce Saturation (Max) @ Ib, Ic
-
165mV @ 100mA, 1A
Current - Collector Cutoff (Max)
-
1μA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
-
300 @ 100mA, 5V
Power - Max
-
800 mW
Frequency - Transition
-
300MHz
Operating Temperature
-
150 ℃ (TJ)
Mounting Type
-
Surface Mount
Package / Case
-
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
-
TP-FA