2SC3650-TD-E
2SC3650-TD-E
Active
Description:  NPN EPITAXIAL PLANAR SILICON
Manufacturer:  SANYO Semiconductor
History Price: $0.23000
In Stock: 13000
2SC3650-TD-E vs 2SC6097-E
Series
-
-
Packaging
Bulk
Bulk or Bag
Status
Active
Obsolete
Transistor Type
-
NPN
Current - Collector (Ic) (Max)
-
3 A
Voltage - Collector Emitter Breakdown (Max)
-
60 V
Vce Saturation (Max) @ Ib, Ic
-
135mV @ 100mA, 1A
Current - Collector Cutoff (Max)
-
1μA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
-
300 @ 100mA, 2V
Power - Max
-
800 mW
Frequency - Transition
-
390MHz
Operating Temperature
-
150 ℃ (TJ)
Mounting Type
-
Through Hole
Package / Case
-
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
-
TP