☰
Home  /  Discrete Semiconductors  /  Transistors - Bipolar (BJT) - Single  /  SANYO Semiconductor 2SC3650-TD-E
2SC3650-TD-E
2SC3650-TD-E
Active
Transistors - Bipolar (BJT) - Single
Description:  NPN EPITAXIAL PLANAR SILICON
Manufacturer:  SANYO Semiconductor
Datasheet:   2SC3650-TD-E Datasheet
History Price: $0.23000
In Stock: 13000
Distributors
Specification
PDF Datasheet
Equivalent
2SC3650-TD-E vs 2SC5658RM3T5G
Mfr Part
2SC3650-TD-E
2SC5658RM3T5G
Category
Transistors - Bipolar (BJT) - Single
Transistors - Bipolar (BJT) - Single
Manufacturer
SANYO Semiconductor
onsemi
Series
-
-
Packaging
Bulk
Tape & Reel (TR)
Status
Active
Active
Transistor Type
-
NPN
Current - Collector (Ic) (Max)
-
100 mA
Voltage - Collector Emitter Breakdown (Max)
-
50 V
Vce Saturation (Max) @ Ib, Ic
-
400mV @ 5mA, 60mA
Current - Collector Cutoff (Max)
-
500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
-
215 @ 1mA, 6V
Power - Max
-
260 mW
Frequency - Transition
-
180MHz
Operating Temperature
-
150 ℃ (TJ)
Mounting Type
-
Surface Mount
Package / Case
-
SOT-723
Supplier Device Package
-
SOT-723
Copyright © 2021-2026 icDirectory.com
About Us | Email: support@icdirectory.com
icDirectory.com is a specialized electronic components platform based in the United Kingdom, dedicated to serving manufacturers and EMS providers from Europe, America, Asia and around the world. The platform is designed to meet the unique needs of professionals in the electronics industry, providing high-quality, real-time inquiry services that connect users with manufacturers and suppliers.