2SC2999E-SPA
2SC2999E-SPA
Active
Description:  NPN EPITAXIAL PLANAR SILICON
Manufacturer:  SANYO Semiconductor
History Price: Active
In Stock: 42000
2SC2999E-SPA vs 2SCR554PT100
Series
-
-
Packaging
Bulk
Tape & Reel (TR)
Status
Active
Not For New Designs
Transistor Type
-
NPN
Current - Collector (Ic) (Max)
-
1.5 A
Voltage - Collector Emitter Breakdown (Max)
-
80 V
Vce Saturation (Max) @ Ib, Ic
-
300mV @ 25mA, 500mA
Current - Collector Cutoff (Max)
-
1μA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
-
120 @ 100mA, 3V
Power - Max
-
2 W
Frequency - Transition
-
300MHz
Operating Temperature
-
150 ℃ (TJ)
Mounting Type
-
Surface Mount
Package / Case
-
TO-243AA
Supplier Device Package
-
MPT3