2SC2999E-SPA
2SC2999E-SPA
Active
Description:  NPN EPITAXIAL PLANAR SILICON
Manufacturer:  SANYO Semiconductor
History Price: Active
In Stock: 42000
2SC2999E-SPA vs 2SC5707-E
Series
-
-
Packaging
Bulk
Bag
Status
Active
Obsolete
Transistor Type
-
NPN
Current - Collector (Ic) (Max)
-
8 A
Voltage - Collector Emitter Breakdown (Max)
-
50 V
Vce Saturation (Max) @ Ib, Ic
-
240mV @ 175mA, 3.5A
Current - Collector Cutoff (Max)
-
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
-
200 @ 500mA, 2V
Power - Max
-
1 W
Frequency - Transition
-
330MHz
Operating Temperature
-
150 ℃ (TJ)
Mounting Type
-
Through Hole
Package / Case
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TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
-
TP