2SC2999E-SPA
2SC2999E-SPA
Active
Description:  NPN EPITAXIAL PLANAR SILICON
Manufacturer:  SANYO Semiconductor
History Price: Active
In Stock: 42000
2SC2999E-SPA vs 2SC5569-TD-E
Series
-
-
Packaging
Bulk
Tape & Reel (TR)
Status
Active
Active
Transistor Type
-
NPN
Current - Collector (Ic) (Max)
-
7 A
Voltage - Collector Emitter Breakdown (Max)
-
50 V
Vce Saturation (Max) @ Ib, Ic
-
240mV @ 175mA, 3.5A
Current - Collector Cutoff (Max)
-
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
-
200 @ 500mA, 2V
Power - Max
-
1.3 W
Frequency - Transition
-
330MHz
Operating Temperature
-
150 ℃ (TJ)
Mounting Type
-
Surface Mount
Package / Case
-
TO-243AA
Supplier Device Package
-
SOT-89/PCP-1