2SB860-E
2SB860-E
Active
Description:  POWER BIPOLAR TRANSISTOR, PNP
Manufacturer:  Renesas Electronics
Datasheet:   2SB860-E Datasheet
History Price: $0.97000
In Stock: 24000
2SB860-E vs 2SB861-C-BP
Series
-
-
Packaging
Bulk
Bulk
Status
Active
Obsolete
Transistor Type
-
PNP
Current - Collector (Ic) (Max)
-
2 A
Voltage - Collector Emitter Breakdown (Max)
-
150 V
Vce Saturation (Max) @ Ib, Ic
-
3V @ 50mA, 500mA
Current - Collector Cutoff (Max)
-
1μA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
-
100 @ 50mA, 4V
Power - Max
-
1.8 W
Frequency - Transition
-
-
Operating Temperature
-
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
-
Through Hole
Package / Case
-
TO-220-3
Supplier Device Package
-
TO-220AB