2SB860-E
2SB860-E
Active
Description:  POWER BIPOLAR TRANSISTOR, PNP
Manufacturer:  Renesas Electronics
Datasheet:   2SB860-E Datasheet
History Price: $0.97000
In Stock: 24000
2SB860-E vs 2SB852KT146B
Series
-
-
Packaging
Bulk
Tape & Reel (TR)
Status
Active
Active
Transistor Type
-
PNP - Darlington
Current - Collector (Ic) (Max)
-
300 mA
Voltage - Collector Emitter Breakdown (Max)
-
32 V
Vce Saturation (Max) @ Ib, Ic
-
1.5V @ 400μA, 200mA
Current - Collector Cutoff (Max)
-
1μA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
-
5000 @ 100mA, 5V
Power - Max
-
200 mW
Frequency - Transition
-
200MHz
Operating Temperature
-
150 ℃ (TJ)
Mounting Type
-
Surface Mount
Package / Case
-
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
-
SMT3