2SB860-E
2SB860-E
Active
Description:  POWER BIPOLAR TRANSISTOR, PNP
Manufacturer:  Renesas Electronics
Datasheet:   2SB860-E Datasheet
History Price: $0.97000
In Stock: 24000
2SB860-E vs 2SB562-C-AP
Series
-
-
Packaging
Bulk
Tape & Box (TB)
Status
Active
Obsolete
Transistor Type
-
PNP
Current - Collector (Ic) (Max)
-
1 A
Voltage - Collector Emitter Breakdown (Max)
-
20 V
Vce Saturation (Max) @ Ib, Ic
-
500mV @ 80mA, 800mA
Current - Collector Cutoff (Max)
-
1μA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
-
120 @ 500mA, 2V
Power - Max
-
900 mW
Frequency - Transition
-
350MHz
Operating Temperature
-
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
-
Through Hole
Package / Case
-
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
-
TO-92