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2SB860-E
2SB860-E
Active
Transistors - Bipolar (BJT) - Single
Description:  POWER BIPOLAR TRANSISTOR, PNP
Manufacturer:  Renesas Electronics
Datasheet:   2SB860-E Datasheet
History Price: $0.97000
In Stock: 24000
Distributors
Specification
PDF Datasheet
Equivalent
2SB860-E vs 2SB1710TL
Mfr Part
2SB860-E
2SB1710TL
Category
Transistors - Bipolar (BJT) - Single
Transistors - Bipolar (BJT) - Single
Manufacturer
Renesas Electronics
Rohm Semiconductor
Series
-
-
Packaging
Bulk
Tape & Reel (TR)
Status
Active
Active
Transistor Type
-
PNP
Current - Collector (Ic) (Max)
-
1 A
Voltage - Collector Emitter Breakdown (Max)
-
30 V
Vce Saturation (Max) @ Ib, Ic
-
350mV @ 25mA, 500mA
Current - Collector Cutoff (Max)
-
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
-
270 @ 100mA, 2V
Power - Max
-
500 mW
Frequency - Transition
-
320MHz
Operating Temperature
-
150 ℃ (TJ)
Mounting Type
-
Surface Mount
Package / Case
-
SC-96
Supplier Device Package
-
TSMT3
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