2SB860-E
2SB860-E
Active
Description:  POWER BIPOLAR TRANSISTOR, PNP
Manufacturer:  Renesas Electronics
Datasheet:   2SB860-E Datasheet
History Price: $0.97000
In Stock: 24000
2SB860-E vs 2SB1698T100
Series
-
-
Packaging
Bulk
Tape & Reel (TR)
Status
Active
Not For New Designs
Transistor Type
-
PNP
Current - Collector (Ic) (Max)
-
1.5 A
Voltage - Collector Emitter Breakdown (Max)
-
30 V
Vce Saturation (Max) @ Ib, Ic
-
370mV @ 50mA, 1A
Current - Collector Cutoff (Max)
-
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
-
270 @ 100mA, 2V
Power - Max
-
2 W
Frequency - Transition
-
280MHz
Operating Temperature
-
150 ℃ (TJ)
Mounting Type
-
Surface Mount
Package / Case
-
TO-243AA
Supplier Device Package
-
MPT3