2SB860-E
2SB860-E
Active
Description:  POWER BIPOLAR TRANSISTOR, PNP
Manufacturer:  Renesas Electronics
Datasheet:   2SB860-E Datasheet
History Price: $0.97000
In Stock: 24000
2SB860-E vs 2SB1412TLR
Mfr Part
Series
-
-
Packaging
Bulk
Tape & Reel (TR)
Status
Active
Not For New Designs
Transistor Type
-
PNP
Current - Collector (Ic) (Max)
-
5 A
Voltage - Collector Emitter Breakdown (Max)
-
20 V
Vce Saturation (Max) @ Ib, Ic
-
1V @ 100mA, 4A
Current - Collector Cutoff (Max)
-
500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
-
180 @ 500mA, 2V
Power - Max
-
1 W
Frequency - Transition
-
120MHz
Operating Temperature
-
150 ℃ (TJ)
Mounting Type
-
Surface Mount
Package / Case
-
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
-
CPT3