☰
Home  /  Discrete Semiconductors  /  Transistors - Bipolar (BJT) - Single  /  Renesas Electronics 2SB860-E
2SB860-E
2SB860-E
Active
Transistors - Bipolar (BJT) - Single
Description:  POWER BIPOLAR TRANSISTOR, PNP
Manufacturer:  Renesas Electronics
Datasheet:   2SB860-E Datasheet
History Price: $0.97000
In Stock: 24000
Distributors
Specification
PDF Datasheet
Equivalent
2SB860-E vs 2SB1243TV2R
Mfr Part
2SB860-E
2SB1243TV2R
Category
Transistors - Bipolar (BJT) - Single
Transistors - Bipolar (BJT) - Single
Manufacturer
Renesas Electronics
Rohm Semiconductor
Series
-
-
Packaging
Bulk
Tape & Box (TB)
Status
Active
Obsolete
Transistor Type
-
PNP
Current - Collector (Ic) (Max)
-
3 A
Voltage - Collector Emitter Breakdown (Max)
-
50 V
Vce Saturation (Max) @ Ib, Ic
-
1V @ 200mA, 2A
Current - Collector Cutoff (Max)
-
1μA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
-
180 @ 500mA, 3V
Power - Max
-
1 W
Frequency - Transition
-
70MHz
Operating Temperature
-
150 ℃ (TJ)
Mounting Type
-
Through Hole
Package / Case
-
3-SIP
Supplier Device Package
-
ATV
Copyright © 2021-2026 icDirectory.com
About Us | Email: support@icdirectory.com
icDirectory.com is a specialized electronic components platform based in the United Kingdom, dedicated to serving manufacturers and EMS providers from Europe, America, Asia and around the world. The platform is designed to meet the unique needs of professionals in the electronics industry, providing high-quality, real-time inquiry services that connect users with manufacturers and suppliers.