2SB808G-SPA-AC
2SB808G-SPA-AC
Active
Description:  SILICON EPITAXIAL PLANAR
Manufacturer:  SANYO Semiconductor
History Price: $0.07000
In Stock: 35000
2SB808G-SPA-AC vs 2SB1647
Series
-
-
Packaging
Bulk
Bulk
Status
Active
Active
Transistor Type
-
PNP - Darlington
Current - Collector (Ic) (Max)
-
15 A
Voltage - Collector Emitter Breakdown (Max)
-
150 V
Vce Saturation (Max) @ Ib, Ic
-
2.5V @ 10mA, 10A
Current - Collector Cutoff (Max)
-
100μA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
-
5000 @ 10A, 4V
Power - Max
-
130 W
Frequency - Transition
-
45MHz
Operating Temperature
-
150 ℃ (TJ)
Mounting Type
-
Through Hole
Package / Case
-
TO-3P-3, SC-65-3
Supplier Device Package
-
TO-3P