2SB1234-TB-E
2SB1234-TB-E
Active
Description:  PNP EPITAXIAL PLANAR SILICON
Manufacturer:  onsemi
History Price: $0.10000
In Stock: 25000
2SB1234-TB-E vs 2SB1733TL
Manufacturer
Series
-
-
Packaging
Bulk
Tape & Reel (TR)
Status
Active
Active
Transistor Type
-
PNP
Current - Collector (Ic) (Max)
-
1 A
Voltage - Collector Emitter Breakdown (Max)
-
30 V
Vce Saturation (Max) @ Ib, Ic
-
350mV @ 25mA, 500mA
Current - Collector Cutoff (Max)
-
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
-
270 @ 100mA, 2V
Power - Max
-
800 mW
Frequency - Transition
-
320MHz
Operating Temperature
-
150 ℃ (TJ)
Mounting Type
-
Surface Mount
Package / Case
-
3-SMD, Flat Leads
Supplier Device Package
-
TUMT3