2SB1234-TB-E
2SB1234-TB-E
Active
Description:  PNP EPITAXIAL PLANAR SILICON
Manufacturer:  onsemi
History Price: $0.10000
In Stock: 25000
2SB1234-TB-E vs 2SB1697T100
Manufacturer
Series
-
-
Packaging
Bulk
Tape & Reel (TR)
Status
Active
Active
Transistor Type
-
PNP
Current - Collector (Ic) (Max)
-
2 A
Voltage - Collector Emitter Breakdown (Max)
-
12 V
Vce Saturation (Max) @ Ib, Ic
-
180mV @ 50mA, 1A
Current - Collector Cutoff (Max)
-
100μA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
-
270 @ 200mA, 2V
Power - Max
-
500 mW
Frequency - Transition
-
360MHz
Operating Temperature
-
150 ℃ (TJ)
Mounting Type
-
Surface Mount
Package / Case
-
TO-243AA
Supplier Device Package
-
MPT3