2SB1234-TB-E
2SB1234-TB-E
Active
Description:  PNP EPITAXIAL PLANAR SILICON
Manufacturer:  onsemi
History Price: $0.10000
In Stock: 25000
2SB1234-TB-E vs 2SB1648
Manufacturer
Series
-
-
Packaging
Bulk
Bulk
Status
Active
Obsolete
Transistor Type
-
PNP - Darlington
Current - Collector (Ic) (Max)
-
17 A
Voltage - Collector Emitter Breakdown (Max)
-
150 V
Vce Saturation (Max) @ Ib, Ic
-
2.5V @ 1.2A, 6A
Current - Collector Cutoff (Max)
-
100μA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
-
5000 @ 10A, 4V
Power - Max
-
200 W
Frequency - Transition
-
45MHz
Operating Temperature
-
150 ℃ (TJ)
Mounting Type
-
Through Hole
Package / Case
-
3-ESIP
Supplier Device Package
-
MT-200